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Senior RF / PA Device Design Engineer (P307) — Austin
Specific Opportunities and Responsibilities:
- Lead a team responsible for IC circuit design of high power and high frequency RF power devices (transistors).
- Optimize the circuit design by using linear and nonlinear device models, complete DC/RF analysis, and thermal characterization.
- Evaluate, select, and characterize, as needed, the process (such as GaN, GaAs or LDMOS) to use in fabricating the devices.
- Work closely with process engineers, packaging engineers, and product engineers to translate system level requirements into simulated schematic and physical design layout files using available process rules.
Requirements:
- MSEE + 10 years (or equivalent) RF / MMIC semiconductor circuit design experience.
- Proven experience in MMIC device design in LDMOS or GaAs. Device power levels of at least 2 watts and operating frequencies of 900MHz or higher.
- Solid working knowledge of associated semiconductor process engineering.
- Familiar with semiconductor device failure analysis techniques.
- Knowledge of high frequency and high reliability semiconductor packaging.
- Knowledge of applicable air interface standards - e.g. IS95 CDMA, W-CDMA.
- Skilled in RF measurement techniques such as - IP3, 1dB compression, ACPR, EVM, etc. and using RF development tools such as ADS.
- Proven record of several completed RF device designs from implementation through production.
- Experience in engineering validation, testing, and debugging.
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